onsemi FDMC89521L

Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R - Tape and Reel
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight196 mg
Technical
Continuous Drain Current (ID)8.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time1.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.635 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1.9 W
Rds On Max17 mΩ
Resistance17 MΩ
Rise Time2.1 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time7.9 ns
Dimensions
Height750 µm
Length3 mm
Width3 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMC89521L.

onsemi
Datasheet0 pages0 years ago
Datasheet8 pages1 year ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet7 pages13 years ago
Datasheet7 pages13 years ago
Technical Drawing1 page10 years ago
Upverter
Technical Drawing1 page5 years ago

Inventory History

3 month trend:
+15.73%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi FDMC89521L.

Related Parts

Descriptions

Descriptions of onsemi FDMC89521L provided by its distributors.

Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R - Tape and Reel
Dual N-Channel PowerTrench® MOSFET 60V, 8.2A, 17mΩ
PT7 60/20V LL Dual N-Channel Power Trench MOSFET - 8LD, MLP, DUAL, NON-JEDEC, 3 X 3MM
MOSFET, DUAL N-CH, 60V, 8.2A, POWER33; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.2A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.013ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.
This device includes two 60 V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor

Technical Specifications

Physical
MountSurface Mount
Number of Pins8
Weight196 mg
Technical
Continuous Drain Current (ID)8.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance13 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationDual
Fall Time1.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.635 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation1.9 W
Rds On Max17 mΩ
Resistance17 MΩ
Rise Time2.1 ns
Schedule B8541290080
Turn-Off Delay Time18 ns
Turn-On Delay Time7.9 ns
Dimensions
Height750 µm
Length3 mm
Width3 mm

Documents

Download datasheets and manufacturer documentation for onsemi FDMC89521L.

onsemi
Datasheet0 pages0 years ago
Datasheet8 pages1 year ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Fairchild Semiconductor
Datasheet7 pages13 years ago
Datasheet7 pages13 years ago
Technical Drawing1 page10 years ago
Upverter
Technical Drawing1 page5 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page12 years ago
Rohs Statement1 page10 years ago