onsemi FDC8601
Production
In StockTechnical Specifications
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance86 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation1.6 W
Rds On Max109 mΩ
Rise Time1.3 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time7.6 ns
Turn-On Delay Time4.5 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Inventory History
3 month trend: +7.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi FDC8601.
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N-Channel 100 V 0.25 Ohm SMT Enhancement Mode Mosfet - SOT-23-6
Descriptions
Descriptions of onsemi FDC8601 provided by its distributors.
N-Channel Shielded Gate Power Trench® MOSFET, 100 V, 2.7 A, 109 mΩ
Small Signal Field-Effect Transistor, 2.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +7.62%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Weight36 mg
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance86 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance210 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.6 W
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation1.6 W
Rds On Max109 mΩ
Rise Time1.3 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time7.6 ns
Turn-On Delay Time4.5 ns
Dimensions
Height1 mm
Length3 mm
Width1.7 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements