Diodes Inc. DMG4800LSD-13
In Stock
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)7.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time8.55 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance798 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.17 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation1.17 W
Rds On Max16 mΩ
Rise Time4.5 ns
Schedule B8541290080
Threshold Voltage1.6 V
Turn-Off Delay Time26.33 ns
Turn-On Delay Time5.03 ns
Dimensions
Height1.5 mm
Length4.95 mm
Width3.95 mm
Inventory History
3 month trend: +0.35%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. DMG4800LSD-13.
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Descriptions
Descriptions of Diodes Inc. DMG4800LSD-13 provided by its distributors.
DMG4800 Series Dual N-Channel 30 V 8.5 A 16 Mohm Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 30V 9.8A 8-Pin SOIC T/R
MOSFET N-Channel 30V 7.5A SOIC8 | Diodes Inc DMG4800LSD-13
MOSFET, DUAL N-CH, 30V, SOIC-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 7.5A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6V; Power Dissipation Pd: 1.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: +0.35%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)7.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time8.55 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance798 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.17 W
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation1.17 W
Rds On Max16 mΩ
Rise Time4.5 ns
Schedule B8541290080
Threshold Voltage1.6 V
Turn-Off Delay Time26.33 ns
Turn-On Delay Time5.03 ns
Dimensions
Height1.5 mm
Length4.95 mm
Width3.95 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements