Infineon BSM50GB120DN2

Trans IGBT Module N-CH 1200V 78A 400000mW 7-Pin 34MM-1
Datasheet

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageModule
MountScrew
Number of Pins7
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current78 A
Element ConfigurationDual
Max Collector Current78 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation400 W
Min Operating Temperature-40 °C
Power Dissipation400 W
Rise Time100 ns
TerminationScrew
Turn-Off Delay Time380 ns
Turn-On Delay Time44 ns
Dimensions
Height30.5 mm
Length94 mm
Width34 mm

Documents

Download datasheets and manufacturer documentation for Infineon BSM50GB120DN2.

element14 APAC
Datasheet10 pages24 years ago
Elcodis
Datasheet10 pages12 years ago
Farnell
Datasheet6 pages15 years ago
iiiC
Datasheet10 pages0 years ago
Upverter
Datasheet0 pages0 years ago

Engineering Resources

View Evaluation kits and Reference designs for Infineon BSM50GB120DN2.

Related Parts

Descriptions

Descriptions of Infineon BSM50GB120DN2 provided by its distributors.

Trans IGBT Module N-CH 1200V 78A 400000mW 7-Pin 34MM-1
IGBT Modules 1200V 50A DUAL
IGBT-MOD 1200V 78A HB 34mm
IGBT Module 34 mm 1.2 kV
IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:78A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:400W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:M34a; Current Ic Continuous a Max:50A; Current Temperature:80°C; Fall Time tf:100ns; Package / Case:Half Bridge 1; Power Dissipation Max:400W; Power Dissipation Pd:400W; Power Dissipation Pd:400W; Pulsed Current Icm:100A; Rise Time:100ns; Termination Type:Screw; Voltage Vces:1.2kV

Manufacturer Aliases

Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEN
  • INFINEON TECH
  • IR/INFINEON
  • IFX
  • INFIENON
  • IFT
  • INFINEON/SIEMENS
  • INFINEON/IR
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • LNFINEON
  • INFINEON TECHNO
  • Infineon Technologies Americas Corp
  • INFINEON TECHNOLOGIES (ASIA

Part Number Aliases

This part may be known by these alternate part numbers:

  • BSM 50 GB 120 DN2
  • BSM 50GB 120DN2

Technical Specifications

Physical
Case/PackageModule
MountScrew
Number of Pins7
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current78 A
Element ConfigurationDual
Max Collector Current78 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation400 W
Min Operating Temperature-40 °C
Power Dissipation400 W
Rise Time100 ns
TerminationScrew
Turn-Off Delay Time380 ns
Turn-On Delay Time44 ns
Dimensions
Height30.5 mm
Length94 mm
Width34 mm

Documents

Download datasheets and manufacturer documentation for Infineon BSM50GB120DN2.

element14 APAC
Datasheet10 pages24 years ago
Elcodis
Datasheet10 pages12 years ago
Farnell
Datasheet6 pages15 years ago
iiiC
Datasheet10 pages0 years ago
Upverter
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements