IGBT MODULE, DUAL, 1200V; Module Configuration:Dual; DC Collector Current:78A; Collector Emitter Voltage Vces:3V; Power Dissipation Pd:400W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +125°C; Transistor Case Style:Module; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:M34a; Current Ic Continuous a Max:50A; Current Temperature:80°C; Fall Time tf:100ns; Package / Case:Half Bridge 1; Power Dissipation Max:400W; Power Dissipation Pd:400W; Power Dissipation Pd:400W; Pulsed Current Icm:100A; Rise Time:100ns; Termination Type:Screw; Voltage Vces:1.2kV