Infineon BFR740L3RHE6327XTSA1
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| ST64312256 | 16,650 | 1 | 20h | |||||||||
| 726-BFR740L3RHE6327X | 9,358 | 1 | Tape & Reel | 2d | ||||||||
| BFR740L3RHE6327XTSA1 | 45,295 | 1d | ||||||||||
| BFR740L3RHE6327XTSA1 | 2,337 | 124 | 16h | |||||||||
| BFR740L3RHE6327XTSA1 | 18,209 | 1 | 19h |
Technical Specifications
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)13 V
Collector Emitter Voltage (VCEO)4 V
Current Rating30 mA
Emitter Base Voltage (VEBO)1.2 V
Frequency42 GHz
Max Collector Current30 mA
Max Operating Temperature150 °C
Max Power Dissipation160 mW
Min Operating Temperature-65 °C
Noise Figure0.5 dB
Number of Elements1
Package Quantity15000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation160 mW
Power Gain24.5 dB
Voltage Rating (DC)4 V
Inventory History
3 month trend: +3.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Infineon BFR740L3RHE6327XTSA1.
Related Parts
NXP SemiconductorsBFU730LXZ
BFU730LX Series 3 V 30 mA NPN Wideband Silicon Germanium RF Transistor - SOT-883
ROHMDTC144EUAT106
DTC144EUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70
ROHMDTC124EKAT146
56@5mA,5V 1 NPN - Pre Biased 200mW 30mA 50V 500nA SOT-23-3L Digital Transistors ROHS
Descriptions
Descriptions of Infineon BFR740L3RHE6327XTSA1 provided by its distributors.
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, X Band, Silicon Germanium, NPN
RF Bipolar Transistors NPN Silicn Germanium RF Transistor
BFR740L3RH Series 4.7 V 30 mA Low Noise Silicon Bipolar RF Transistor - TSLP-3
Trans RF BJT NPN 4V 0.04A 160mW Automotive 3-Pin TSLP T/R
The BFR740L3RH is a very low noise wideband NPN RF transistor, TSLP-3-9, RoHS
Infineon SCT
4V,45mA,Bipolar RF NPN Transistor
RF TRANSISTOR, NPN, 4V, 47GHZ, TSLP; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 4V; Transition Frequency ft: 47GHz; Power Dissipation Pd: 160mW; DC Collector Current: 40mA; DC Current Gain hFE: 160hFE; RF Tr
The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineons reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of 42 GHz and is suited for low voltage applications (VCEO,max = 4 V) from VHF to 12 GHz. Due to its low power consumption the device is very energy efficient and well suited for mobile applications. The BFR740L3RH is housed in a very thin small leadless package ideal for modules. | Summary of Features: Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at; 5.5 GHz, 3 V, 6 mA; High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V; Very thin small leadless package (height only 0.31 mm), hence ideal for modules with compact size and low profile height; Pb-free (RoHS compliant) and halogen-free package; Qualification report according to AEC-Q101 available | Target Applications: Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMAX 2.5/3.5/5.5 GHz, UWB, Bluetooth; Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB; Multimedia applications such as mobile/portable TV, CATV, FM Radio; 3G/4G UMTS/LTE mobile phone applications; ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications. As discrete active mixer, amplifier in VCOs and buffer amplifier
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +3.84%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingGold
MountSurface Mount
Number of Pins3
Technical
Collector Base Voltage (VCBO)13 V
Collector Emitter Voltage (VCEO)4 V
Current Rating30 mA
Emitter Base Voltage (VEBO)1.2 V
Frequency42 GHz
Max Collector Current30 mA
Max Operating Temperature150 °C
Max Power Dissipation160 mW
Min Operating Temperature-65 °C
Noise Figure0.5 dB
Number of Elements1
Package Quantity15000
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation160 mW
Power Gain24.5 dB
Voltage Rating (DC)4 V
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements