onsemi BC639
Obsolete
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product200 MHz
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Manufacturer Package IdentifierTO−92 CASE 29 STYLE 14
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
TerminationThrough Hole
Transition Frequency200 MHz
Voltage Rating (DC)80 V
Inventory History
3 month trend: +2.79%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi BC639.
Jameco
Future Electronics
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.094
$ 0.063
Stock
323,901
244,055
Authorized Distributors
1
1
Mount
Through Hole
-
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
Max Collector Current
1 A
1 A
Transition Frequency
200 MHz
200 MHz
Collector Emitter Saturation Voltage
500 mV
500 mV
hFE Min
40
25
Power Dissipation
1 W
625 mW
Supply Chain
Lifecycle StatusObsolete (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BC639.
Related Parts
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onsemiKSC1008YBU
Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Descriptions
Descriptions of onsemi BC639 provided by its distributors.
Bulk Through Hole NPN Single Bipolar (BJT) Transistor 40 @ 150mA 2V 100nA ICBO 625mW 100MHz
Trans GP BJT NPN 100V 1A 1000mW 3-Pin TO-92 Box / TRANS NPN 80V 1A TO-92
High Current NPN Bipolar Transistor
TRANSISTOR, NPN TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1W; DC Collector Current: 1A; DC Current Gain hFE: 40hFE; Transistor Case Style: T
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; DC Current Gain Min (hfe):40; Package/Case:TO-92; C-E Breakdown Voltage:80V; DC Collector Current:1A; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:150mA; Gain Bandwidth ft Typ:130MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-92; Pin Configuration:f; Power Dissipation Ptot Max:625mW; Transistor Type:General Purpose; Voltage Vcbo:100V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +2.79%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Weight201 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product200 MHz
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Manufacturer Package IdentifierTO−92 CASE 29 STYLE 14
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
TerminationThrough Hole
Transition Frequency200 MHz
Voltage Rating (DC)80 V
Documents
Download datasheets and manufacturer documentation for onsemi BC639.
Jameco
Future Electronics
Compliance
Environmental Classification
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements