onsemi 2SB1123T-TD-E
Production
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 2SB1123T-TD-E | 279,056 | 17h | ||||||||||
| 2SB1123T-TD-E | 176,000 | >1wk | ||||||||||
| 488-2SB1123T-TD-ECT-ND | 1,799 | 1 | Cut Tape | 1d | ||||||||
| 863-2SB1123T-TD-E | 64 | 1 | Tape & Reel | 1d | ||||||||
| 70339352 | 0 | 25 | Bulk | 19h |
Technical Specifications
Physical
Number of Pins3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage-300 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-6 V
Gain Bandwidth Product150 MHz
hFE Min100
Max Breakdown Voltage50 V
Max Collector Current2 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
PackagingTape and Reel
PolarityPNP
Schedule B8541210080
Transition Frequency150 MHz
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm
Inventory History
3 month trend: -1.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi 2SB1123T-TD-E.
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Descriptions
Descriptions of onsemi 2SB1123T-TD-E provided by its distributors.
Bipolar Transistor, -50V, -2A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200-400
Trans GP BJT PNP 50V 2A 500mW 4-Pin(3+Tab) SOT-89 T/R
50V 500mW 2A 150MHz 300mV@50mA1mA PNP +150¡Í@(Tj) SOT-89 Bipolar Transistors - BJT ROHS
ON Semi 2SB1123T-TD-E PNP Bipolar Transistor, 2 A, 50 V, 3-Pin PCP | ON Semiconductor 2SB1123T-TD-E
Bipolar Transistors - BJT BIP PNP 2A 50V
Bip TR 50 V 2A VCE(sat);0.7V max. PNP Single PCP, h FE = 200-400
TRANSISTOR, PNP, 50V, 2A, SOT89; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Typ Gain Bandwidth ft:150MHz; Power Dissipation Pd:1.3W; DC Collector Current:-2A; DC Current Gain hFE:400; Transistor Case Style:SOT-89; No. of Pins:3
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: -1.90%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Number of Pins3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage-300 mV
Collector Emitter Voltage (VCEO)50 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-6 V
Gain Bandwidth Product150 MHz
hFE Min100
Max Breakdown Voltage50 V
Max Collector Current2 A
Max Frequency150 MHz
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
PackagingTape and Reel
PolarityPNP
Schedule B8541210080
Transition Frequency150 MHz
Dimensions
Height1.5 mm
Length4.5 mm
Width2.5 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements