Infineon 2N7002DWH6327XTSA1
Production
In StockPrice and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 726-2N7002DWH6327 | 182,304 | 1 | Tape & Reel | 11h | ||||||||
| 2N7002DWH6327XTSA1 | 2,253,000 | 3K | 1d | |||||||||
| 2N7002DWH6327XTSA1 | 96,000 | 3K | 10h | |||||||||
| 2N7002DWH6327XTSA1CT-ND | 104,807 | 1 | Cut Tape | 11h | ||||||||
| 2N7002DWH6327XTSA1 | 9,000 | 1 | 10h |
Technical Specifications
Physical
Case/PackageSOT-363-6
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)60 V
Fall Time3.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 pF
Max Dual Supply Voltage60 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance3 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max3 Ω
Rise Time3.3 ns
Schedule B8541210080
Turn-Off Delay Time5.5 ns
Turn-On Delay Time3 ns
Dimensions
Height1 mm
Inventory History
3 month trend: +10.57%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Infineon 2N7002DWH6327XTSA1.
element14 APAC
Farnell
iiiC
_legacy Avnet
Fairchild Semiconductor
Engineering Resources
View Evaluation kits and Reference designs for Infineon 2N7002DWH6327XTSA1.
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Descriptions
Descriptions of Infineon 2N7002DWH6327XTSA1 provided by its distributors.
Transistor MOSFET Array Dual N-CH 60V 0.3A 6-Pin SOT-363 T/R
Avnet Japan
Dual N-Channel 60 V 3 Ohm 0.4 nC OptiMOS Small Signal Mosfet - SOT-363
OPTIMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET, 60V, 115mA, SOT-363; Transi; N CH MOSFET, 60V, 115mA, SOT-363; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:115mA; Drain Source Voltage Vds, N Channel:60V; On Resistance Rds(on), N Channel:1.6ohm; Rds(on) Test Voltage Vgs:5V
N-Channel Enhancement Mode Field Effect Transistor Product Highlights: Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant
All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = 20 / Fall Time ns = 3.1 / Rise Time ns = 3.3 / Turn-OFF Delay Time ns = 5.5 / Turn-ON Delay Time ns = 3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Power Dissipation (Pd) mW = 500
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +10.57%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-363-6
MountSurface Mount
Number of Pins6
Technical
Continuous Drain Current (ID)115 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.6 Ω
Drain to Source Voltage (Vdss)60 V
Fall Time3.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13 pF
Max Dual Supply Voltage60 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance3 Ω
Package Quantity3000
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max3 Ω
Rise Time3.3 ns
Schedule B8541210080
Turn-Off Delay Time5.5 ns
Turn-On Delay Time3 ns
Dimensions
Height1 mm
Documents
Download datasheets and manufacturer documentation for Infineon 2N7002DWH6327XTSA1.
element14 APAC
Farnell
iiiC
_legacy Avnet
Fairchild Semiconductor
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements