onsemi 2N7000
Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk
$ 0.131
Production
Inventory History
3 month trend: +8.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
CAD Models
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Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.131
$ 0.167
$ 0.167
Stock
2,827,417
1,440,292
1,440,292
Authorized Distributors
6
6
6
Mount
Through Hole
Through Hole
Through Hole
Case/Package
TO-92
TO-92
TO-92
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
200 mA
200 mA
200 mA
Threshold Voltage
2.1 V
2.1 V
2.1 V
Rds On Max
5 Ω
2 Ω
2 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
350 mW
400 mW
400 mW
Input Capacitance
40 pF
50 pF
50 pF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Related Parts
Descriptions
Descriptions of onsemi 2N7000 provided by its distributors.
Transistor MOSFET N Channel 60 Volt 0.2 Amp 3 Pin TO-92 Bulk
ON SEMICONDUCTOR - 2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
MOSFET;N-Ch;VDSS 60VDC;RDS(ON) 5 Ohms;ID 200mA;TO-92 (TO-226);PD 350mW;-55degc
N-Channel MOSFET, Enhancement Mode, 60V, 200mA, 5 Ω
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Power MOSFET, N Channel, 60 V, 200 mA, 5 ohm, TO-92, Through Hole
MOSFET, N CHANNEL, 200MA, 60V, TO-92; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V
This N-Channel enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Inventory History
3 month trend: +8.40%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-92
Contact PlatingCopper, Silver, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Continuous Drain Current (ID)200 mA
Current Rating200 mA
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5 Ω
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance40 pF
Max Operating Temperature150 °C
Max Power Dissipation400 mW
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs2.1 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation350 mW
Rds On Max5 Ω
Resistance5 Ω
Schedule B8541210080
Threshold Voltage2.1 V
Turn-Off Delay Time10 ns
Voltage Rating (DC)60 V
Dimensions
Height5.2 mm
Length4.8 mm
Width4.19 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements