价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFR120ZTRPBF | 6,000 | 6K | 4d | ||||||||
| RS (Formerly Allied Electronics) | IRFR120ZTRPBF | 0 | 6K | Bulk | 6h | |||||||
| Farnell | IRFR120ZTRPBF | 0 | 1 | Cut Tape | 13h | |||||||
| Component Stockers USA | IRFR120ZTRPBF | 30,139 | 7d | |||||||||
| Win Source | WS-IRFR120ZTRPBF | 1,873 | 125 | 14h |
备用零件
Price @ 1000
$ 0.348
$ 0.506
$ 0.506
Stock
490,356
96,242
96,242
Authorized Distributors
3
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
8.7 A
8.7 A
8.7 A
Threshold Voltage
-
2 V
2 V
Rds On Max
190 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
35 W
35 W
35 W
Input Capacitance
310 pF
310 pF
310 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-03
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Single P-Channel 100 V 300 mOhm 8.4 nC 42 W Silicon SMT Mosfet - TO-252-3
描述
由其分销商提供的 Infineon IRFR120ZTRPBF 的描述。
Single N-Channel 100V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 8.7 A, 0.15 ohm, TO-252AA, Surface Mount
HEXFET POWER MOSFET Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:35W; No. of Pins:3Pins RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance310 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance190 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation35 W
Rds On Max190 mΩ
Resistance190 MΩ
Rise Time26 ns
Schedule B8541290080
Turn-Off Delay Time27 ns
Turn-On Delay Time8.3 ns
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm