供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-08-03
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
Diodes Inc.ZXMN10A25KTC
DIODES INC. ZXMN10A25KTC MOSFET Transistor, N Channel, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
InfineonAUIRFR120Z
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Diodes Inc.ZXMP7A17KTC
ZXMP7A17K Series P-Channel 70 V 0.16 Ohm Power MOSFET Surface Mount - TO-252-3
Diodes Inc.ZXMN7A11KTC
Mosfet, N-Ch, 70V, 6.1A, To-252 Rohs Compliant: Yes |Diodes Inc. ZXMN7A11KTC
描述
由其分销商提供的 onsemi FDD1600N10ALZ 的描述。
N-Channel PowerTrench® MOSFET 100V, 6.8A, 160mΩ
Power Field-Effect Transistor, 6.8A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 100V, 6.8A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.124ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)6.8 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance225 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation14.9 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation14.9 W
Rds On Max160 mΩ
Rise Time14 ns
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time7 ns
Dimensions
Height2.517 mm
Length6.73 mm
Width6.22 mm