价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRFR120Z | 4,974 | 23h | |||||||||
| RS (Formerly Allied Electronics) | AUIRFR120Z | 0 | 3K | Bulk | 15h | |||||||
| Farnell | AUIRFR120Z | 0 | 5 | 22h | ||||||||
| Verical | AUIRFR120Z | 2,360 | 493 | |||||||||
| Win Source | WS-AUIRFR120Z | 17,000 | 115 | 23h |
备用零件
Price @ 1000
$ 0.506
$ 0.348
$ 0.348
Stock
80,547
485,218
485,218
Authorized Distributors
3
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
100 V
100 V
100 V
Continuous Drain Current (ID)
8.7 A
8.7 A
8.7 A
Threshold Voltage
2 V
-
-
Rds On Max
190 mΩ
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
35 W
35 W
35 W
Input Capacitance
310 pF
310 pF
310 pF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-12-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-06-15
LTD Date2019-12-15
相关零件
onsemiSFT1443-TL-W
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon AUIRFR120Z 的描述。
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
Infineon SCT
Single N-Channel 100 V 190 mOhm Auto Grade Power MosFet - TO-252-3
AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
MOSFET,W DIODE,N CH,100V,8.7A,DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:8.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.15ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:35W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:20V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance310 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation35 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
On-State Resistance190 mΩ
Package Quantity3000
Power Dissipation35 W
Rds On Max190 mΩ
Resistance190 MΩ
Rise Time26 ns
Threshold Voltage2 V
Turn-Off Delay Time27 ns
Turn-On Delay Time8.3 ns
Dimensions
Height2.52 mm
Length6.73 mm
Width6.22 mm