Infineon IRFR120ZPBF

Name: Infineon IRFR120ZPBF
Brand: Infineon
SKU: IRFR120ZPBF

Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFR120ZPBF	0	1650	Bulk					1.500	17h
Farnell	2	IRFR120ZPBF	0	1		1.114*	0.887*	0.524*	0.420*	0.411*	1d
Win Source		WS-IRFR120ZPBF	1,999	125					0.350	0.313	1h
Worldway Electronics		IRFR120ZPBF	15,857	7	Tube		0.122	0.119	0.112	0.112	1d
Lixinc		IRFR120ZPBF	18,893			0.190	0.166	0.166	0.166	0.166	1d

数据表和文档

下载 Infineon IRFR120ZPBF 的数据表和制造商文档。

IHS

Datasheet12 页15 年前

Newark

Farnell

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFR120ZPBF 的描述。

Single N-Channel 100 V 190 mOhm 6.9 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Lighting LED

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.7A; On Resistance, Rds(on):190mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

Newark