价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | HUFA76609D3S | 0 | 1800 | 2d | ||||||||
| Microchip USA | HUFA76609D3S | 170 | 3500 | Tray | 17h | |||||||
| Component Stockers USA | HUFA76609D3S | 22 | 3d | |||||||||
| Win Source | WS-HUFA76609D3S | 11,600 | 135 | 1d | ||||||||
| Worldway Electronics | HUFA76609D3S | 23,195 | 7 | Tube | 23h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
相关零件
onsemiHUF76609D3S
10A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 100V 10A DPAK
InfineonIRLR120NTRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
InfineonIRLR120NTRLPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.185Ohm;ID 10A;D-Pak (TO-252AA);PD 48W
Diodes Inc.DMN10H170SK3-13
Transistor: N-MOSFET; unipolar; 100V; 7.5A; 0.16ohm; 17W; -55+150 deg.C; SMD; TO252(DPAK)
描述
由其分销商提供的 onsemi HUFA76609D3S 的描述。
TRANS MOSFET N-CH 100V 10A 3PIN TO-252AA
MOSFETs 10a, 100V, 0.165 Ohm Logic Level N-Ch
MOSFET N-CH 100V 10A TO252AA
Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N-CHANNEL POWER MOSFET
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance168 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time39 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance425 pF
Max Operating Temperature175 °C
Max Power Dissipation49 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation49 W
Rds On Max160 mΩ
Rise Time18 ns
Turn-Off Delay Time55 ns
Voltage Rating (DC)100 V