Infineon IRFH5006TRPBF

Name: Infineon IRFH5006TRPBF
Brand: Infineon
SKU: IRFH5006TRPBF

INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew

$ 1.177

Obsolete

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFH5006TRPBF	13,196	1		1.950	1.554	1.293	1.177	1.177
Rochester Electronics		IRFH5006TRPBF	4,000					1.160	0.963	0.858	7h
RS (Formerly Allied Electronics)		IRFH5006TRPBF	0	5	Bulk		2.730	2.460	2.460	2.460	2d
Farnell	3	IRFH5006TRPBF	0	1	Cut Tape	2.479*	1.916*	1.514*	1.514*	1.514*	3h
Microchip USA		IRFH5006TRPBF	1,355	600					1.630	1.630	5d

数据表和文档

下载 Infineon IRFH5006TRPBF 的数据表和制造商文档。

Newark

Datasheet10 页11 年前

element14 APAC

TME

Farnell

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+56.46%

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InfineonIRFH5006TRPBF

Texas InstrumentsCSD18532NQ5B

Price @ 1000

$ 1.177

$ 1.12

Stock

323,211

308,651

Authorized Distributors

Mount

Surface Mount

Case/Package

QFN

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

21 A

100 A

Threshold Voltage

2 V

Rds On Max

4.1 mΩ

3.4 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.6 W

3.2 W

Input Capacitance

4.175 nF

5.34 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-03-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-05-15

LTD Date2023-11-15

描述

由其分销商提供的 Infineon IRFH5006TRPBF 的描述。

INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew

Fly-Wing Technology

Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

Infineon SCT

Trans MOSFET N-CH 60V 21A 8-Pin QFN T/R

Avnet

MOSFET, N-CH, 60V, 21A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; R; Available until stocks are exhausted Alternative available

Farnell

MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:3.6W

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon