Infineon IRFH5210TR2PBF

Name: Infineon IRFH5210TR2PBF
Brand: Infineon
SKU: IRFH5210TR2PBF

100V Single N-Channel HEXFET Power MOSFET in a PQFN package

$ 0.69

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFH5210TR2PBF	0	800	Bulk				0.690	0.670	16h
Avnet		IRFH5210TR2PBF	0	800							2d
Farnell	2	IRFH5210TR2PBF	0	1	Cut Tape	1.083*	1.083*	0.839*	0.717*	0.717*	23h
Component Stockers USA		IRFH5210TR2PBF	18,365			0.500	0.490	0.470	0.460	0.460	6d
Win Source		WS-IRFH5210TR2PBF	9,700	21				2.222	1.864	1.864	21m

数据表和文档

下载 Infineon IRFH5210TR2PBF 的数据表和制造商文档。

IHS

Datasheet10 页11 年前

Datasheet9 页11 年前

Newark

Factory Futures

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-04-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFH5210TR2PBF 的描述。

100V Single N-Channel HEXFET Power MOSFET in a PQFN package

International Rectifier

MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R

Verical

MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes

Newark

MOSFET,N CH,100V,55A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V

element14 APAC