Infineon IRFH3702TR2PBF

Name: Infineon IRFH3702TR2PBF
Brand: Infineon
SKU: IRFH3702TR2PBF

30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package

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价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFH3702TR2PBF	0	1200	Bulk					0.350	6h
Farnell	IRFH3702TR2PBF	0	1		0.791*	0.791*	0.614*	0.491*	0.491*	13h
Microchip USA	IRFH3702TR2PBF	170	300	Tray				9.165	9.165	1d
Component Stockers USA	IRFH3702TR2PBF	19,762			0.310	0.300	0.290	0.280	0.280	3d
Win Source	WS-IRFH3702TR2PBF	6,610	60				0.873	0.582	0.582	14h

数据表和文档

下载 Infineon IRFH3702TR2PBF 的数据表和制造商文档。

Newark

Datasheet10 页15 年前

Datasheet10 页17 年前

描述

由其分销商提供的 Infineon IRFH3702TR2PBF 的描述。

30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package

International Rectifier

MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R

Avnet

MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

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