Infineon IRFH5110TR2PBF

100V Single N-Channel HEXFET Power MOSFET in a PQFN package
$ 1.59
Obsolete
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRFH5110TR2PBF0800Bulk
6h
AvnetIRFH5110TR2PBF0400
19h
Microchip USAIRFH5110TR2PBF132150Tray
5d
Win SourceWS-IRFH5110TR2PBF60,02035
17h
Worldway ElectronicsIRFH5110TR2PBF3,5287
15h

数据表和文档

下载 Infineon IRFH5110TR2PBF 的数据表和制造商文档。

IHS

Datasheet10 页11 年前
Datasheet9 页11 年前

element14 APAC

RS (Formerly Allied Electronics)

供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12

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描述

由其分销商提供的 Infineon IRFH5110TR2PBF 的描述。

100V Single N-Channel HEXFET Power MOSFET in a PQFN package
International Rectifier
HEXFET POWER MOSFET Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ComSIT Distribution GmbH
MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V
element14 APAC

图片

Farnell
element14
RS (Formerly Allied Electronics)
International Rectifier

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