价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 31Y2064 | 1 | 1 | 2d | ||||||||
| Newark | IRFH7085TRPBF | 1 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFH7085TRPBF | 4,000 | 1 | |||||||||
| Future Electronics | IRFH7085TRPBF | 20,000 | 4K | Tape & Reel | ||||||||
| Rochester Electronics | IRFH7085TRPBF | 2,562 | 21h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-18
Lifecycle StatusNRND (Last Updated: 3 months ago)
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描述
由其分销商提供的 Infineon IRFH7085TRPBF 的描述。
60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
Infineon SCT
Single N-Channel 60 V 3.2 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
MOSFET N-CH 60V 23A 6-PQFN / Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R
MOSFET, N-CH, 60V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: -; Transistor Case Style: QFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.46 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.2 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation156 W
Rds On Max3.2 mΩ
Rise Time25 ns
Threshold Voltage3.7 V
Turn-Off Delay Time63 ns
Turn-On Delay Time13 ns
Dimensions
Height950 µm
Length6.15 mm
Width5.15 mm