备用零件
Price @ 1000
$ 2.48
$ 1.64
$ 1.64
Stock
98,749
148,704
148,704
Authorized Distributors
2
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
75 A
150 A
150 A
Threshold Voltage
4 V
-
-
Rds On Max
4.9 mΩ
4.9 mΩ
4.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
230 W
230 W
230 W
Input Capacitance
4.78 nF
4.78 nF
4.78 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
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描述
由其分销商提供的 Infineon IRF1405ZSPBF 的描述。
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK Tube
HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CHANNEL MOSFET, 55V, 75A, D2-PAK; Tran; N CHANNEL MOSFET, 55V, 75A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time82 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.78 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.9 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max4.9 mΩ
Resistance4.9 MΩ
Rise Time110 ns
Threshold Voltage4 V
Turn-Off Delay Time48 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm