供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-07
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2014-01-29
LTD Date2014-07-29
相关零件
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V
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N-Channel 60V - 0.014Ohm - 60A - D2APK StripFET(TM) II POWER MOSFET
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Power MOSFET, N Channel, 55 V, 40 A, 0.005 ohm, TO-263 (D2PAK), Surface Mount
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描述
由其分销商提供的 STMicroelectronics STB60N55F3 的描述。
N-channel 55 V, 6.5 mOhm typ., 80 A STripFET(TM) III Power MOSFET in D2PAK package
Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:80A; Resistance, Rds On:0.0085ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8.5 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time11.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.2 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation110 W
Rds On Max8.5 mΩ
Resistance8.5 MΩ
Rise Time50 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm