Infineon IRF1010NSPBF

Name: Infineon IRF1010NSPBF
Brand: Infineon
SKU: IRF1010NSPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; D2Pak; PD 180W; VGS +/-20V

$ 1.8

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF1010NSPBF	0	1	Bulk	2.000	1.800	1.800	1.800	1.800	15h
Farnell	IRF1010NSPBF	0	1		3.346*	3.346*	1.605*	1.183*	1.183*	22h
Win Source	WS-159373	7,936	35				1.234	1.003	1.003	23h
Worldway Electronics	IRF1010NSPBF	17,416	7	Tube		0.596	0.578	0.547	0.547	22h
Anlinkda	IRF1010NSPBF	22,472			1.300	1.164	0.989	0.968	0.937	6h

数据表和文档

下载 Infineon IRF1010NSPBF 的数据表和制造商文档。

IHS

Datasheet11 页22 年前

Farnell

Newark

RS (Formerly Allied Electronics)

iiiC

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-08-25

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF1010NSPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;D2Pak;PD 180W;VGS +/-20V

RS (Formerly Allied Electronics)

In a Tube of 50, IRF1010NSPBF N-Channel MOSFET, 85 A, 55 V HEXFET, 3-Pin D2PAK Infineon

Fly-Wing Technology

Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 85A 3-Pin(2+Tab) D2PAK

Avnet

Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon