Infineon IRF1010ESPBF

Name: Infineon IRF1010ESPBF
Brand: Infineon
SKU: IRF1010ESPBF

Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

$ 3.75

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF1010ESPBF	0	500	Bulk				3.750	3.490	18h
Farnell	IRF1010ESPBF	0	1		3.812*	3.812*	1.906*	0.844*	0.844*	2h
Win Source	WS-IRF1010ESPBF	8,100	40				1.228	0.998	0.998	3h
Worldway Electronics	IRF1010ESPBF	19,678	7			0.201	0.195	0.185	0.185	2h
Run Hong Electronics	IRF1010ESPBF	7,326			4.216	4.216	4.216	4.216	4.216	14h

数据表和文档

下载 Infineon IRF1010ESPBF 的数据表和制造商文档。

IHS

Datasheet11 页21 年前

element14 APAC

DigiKey

Newark

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF1010ESPBF 的描述。

Trans MOSFET N-CH 60V 84A 3-Pin (2+Tab) D2PAK

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, 60V, 84A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:84A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:84A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:12mohm; Package / Case:D2-PAK; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:SMD; Voltage Vds:60V; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC