价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | AUIRF1405ZSTRL | 800 | 8h | |||||||||
| RS (Formerly Allied Electronics) | AUIRF1405ZSTRL | 0 | 800 | Bulk | 1d | |||||||
| Mouser | 942-AUIRF1405ZSTRL | 323 | 1 | Tape & Reel | ||||||||
| Verical | AUIRF1405ZSTRL | 800 | 164 | |||||||||
| Win Source | WS-AUIRF1405ZSTRL | 8,350 | 11 | 9h |
备用零件
Price @ 1000
$ 1.64
$ 2.48
$ 2.48
Stock
161,313
117,908
117,908
Authorized Distributors
3
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
150 A
75 A
75 A
Threshold Voltage
-
4 V
4 V
Rds On Max
4.9 mΩ
4.9 mΩ
4.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
230 W
230 W
230 W
Input Capacitance
4.78 nF
4.78 nF
4.78 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-04-06
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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描述
由其分销商提供的 Infineon AUIRF1405ZSTRL 的描述。
Trans MOSFET N-CH 55V 150A 3-Pin(2+Tab) D2PAK T/R
Single N-Channel 55 V 4.9 mOhm 180 nC Automotive HEXFET® Power Mosfet - TO-263-3
AUTOMOTIVE MOSFET, 55V 75.000A AUTO D2PAK
MOSFET AUTO 55V 1 N-CH HEXFET 5.3mOhms
Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)150 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time82 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.78 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation230 W
Rds On Max4.9 mΩ
Rise Time110 ns
Turn-Off Delay Time48 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm