Infineon IPD70N10S3L12ATMA1

Name: Infineon IPD70N10S3L12ATMA1
Brand: Infineon
SKU: IPD70N10S3L12ATMA1

100V, N-Ch, 11.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS

$ 2.214

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Distributor		SKU		Min	Pkg
Future Electronics		IPD70N10S3L12ATMA1	2,500	2500	Tape & Reel					1.670
Arrow Electronics		IPD70N10S3L12ATMA1	7,302	1		2.718	2.718	2.718	2.718	0.982
Rochester Electronics		IPD70N10S3L12ATMA1	15,948					1.360	1.130	1.010	9h
Newark		IPD70N10S3L12ATMA1	0	2500	Tape & Reel					1.420
Farnell	3	IPD70N10S3L12ATMA1	512	5	Cut Tape		3.625*	2.712*	2.269*	2.269*	9h

数据表和文档

下载 Infineon IPD70N10S3L12ATMA1 的数据表和制造商文档。

IHS

Datasheet9 页2 年前

Datasheet9 页14 年前

iiiC

库存历史记录

3 个月趋势:

-8.61%

CAD 模型

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供应链

Country of OriginAustria, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-12

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

LTB Date2024-01-15

LTD Date2025-01-15

描述

由其分销商提供的 Infineon IPD70N10S3L12ATMA1 的描述。

100V, N-Ch, 11.5 mΩ max, Automotive MOSFET, DPAK, OptiMOS™-T, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 70A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFET, N CH, 100V, 70A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 70A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0096oh; Available until stocks are exhausted Alternative available

Farnell

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); 100% Avalanche tested | Benefits: highest current capability 180A; low switching and conduction power losses for high thermal efficiency; robust packages with superior quality and reliability; optimized total gate charge enables smaller driver output stages | Target Applications: 48V inverter; 48V DC/DC; HID lighting

Infineon