Infineon BSC886N03LSGATMA1

Name: Infineon BSC886N03LSGATMA1
Brand: Infineon
SKU: BSC886N03LSGATMA1

Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 13 A, TDSON-8, BSC886N03LSGATMA1

$ 0.262

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Arrow Electronics		BSC886N03LSGATMA1	8,258	1		0.132	0.132	0.132	0.132	0.132
Rochester Electronics		BSC886N03LSGATMA1	88,225					0.316	0.262	0.234	4h
Farnell	2	BSC886N03LSGATMA1	4,936	1	Cut Tape	1.165*	0.722*	0.473*	0.304*	0.304*	3h
Mouser		726-BSC886N03LSG	5,000	1	Tape & Reel	1.140	0.707	0.463	0.324	0.265
Verical	5	BSC886N03LSGATMA1	8,258	9			0.132	0.132	0.132	0.132

数据表和文档

下载 Infineon BSC886N03LSGATMA1 的数据表和制造商文档。

IHS

Datasheet10 页15 年前

Upverter

Future Electronics

Burklin Elektronik

iiiC

库存历史记录

3 个月趋势:

-0.00%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon BSC886N03LSGATMA1 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-10-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2023-03-31

LTD Date2023-09-30

相关零件

InfineonBSC050N03LSGATMA1

Power MOSFET, N Channel, 30 V, 80 A, 0.0042 ohm, PG-TDSON, Surface Mount

详细信息

onsemiNTMFS4837NT1G

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 74A Tc 74A 2.2W 10ns

详细信息

InfineonIRFH8325TRPBF

30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

详细信息

InfineonIRFHM8329TRPBF

Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

详细信息

onsemiNTMFS4839NT1G

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.5A Ta 64A Tc 64A 2.17W 7ns

详细信息

NXP SemiconductorsPH8030L,115

Trans MOSFET N-CH 30V 76.7A 5-Pin(4+Tab) LFPAK T/R

详细信息

InfineonBSC884N03MS G

Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP

详细信息

InfineonIRLML0030TRPBF

Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23

详细信息

InfineonIRLML2030TRPBF

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

详细信息

onsemiNDS352AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ

详细信息

VishaySQ2348ES-T1_GE3

3W(Tc) 20V 2.5V@ 250¦ÌA 14.5nC@ 10 V 1N 30V 24m¦¸@ 12A,10V 8A 540pF@15V SOT-23-3,TO-236 1.12mm

详细信息

VishaySI2369DS-T1-GE3

Single P-Channel 30 V 0.04 Ohm 17 nC 1.25 W Silicon SMT Mosfet - SOT-23

详细信息

描述

由其分销商提供的 Infineon BSC886N03LSGATMA1 的描述。

Infineon Technologies N channel OptiMOS3 power MOSFET, 30 V, 13 A, TDSON-8, BSC886N03LSGATMA1

Burklin Elektronik

Trans MOSFET N-CH 30V 13A Automotive 8-Pin TDSON EP T/R

Verical

Power MOSFET, N Channel, 30 V, 65 A, 0.005 ohm, PG-TDSON, Surface Mount

Avnet

Mosfet, N-Ch, 30V, 65A, Pg-Tdson-8; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.005Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Rohs Compliant: Yes |Infineon BSC886N03LSGATMA1

Newark