Infineon IRLML0030TRPBF

Name: Infineon IRLML0030TRPBF
Brand: Infineon
SKU: IRLML0030TRPBF

Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23

$ 0.153

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Distributor		SKU		Min	Pkg
Avnet	2	IRLML0030TRPBF	15,000	3K						0.068	16h
Newark		IRLML0030TRPBF	31,171	1	Cut Tape	0.534	0.344	0.230	0.165	0.165
Arrow Electronics	4	IRLML0030TRPBF	381,933	1		0.082	0.082	0.082	0.082	0.082
DigiKey	3	IRLML0030TRPBFCT-ND	115,942	1	Cut Tape	0.540	0.331	0.210	0.141	0.141
Future Electronics	2	IRLML0030TRPBF	0	3K	Tape & Reel					0.084

数据表和文档

下载 Infineon IRLML0030TRPBF 的数据表和制造商文档。

IHS

Datasheet10 页14 年前

Datasheet11 页14 年前

Farnell

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-8.98%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2021-04-28

Lifecycle StatusProduction (Last Updated: 1 week ago)

描述

由其分销商提供的 Infineon IRLML0030TRPBF 的描述。

Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23

Maritex

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

MOSFET N-CH 30V 5.3A SOT-23-3 / Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R

Win Source

Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23

Future Electronics

Transistor MOSFET N-Ch. 5,2A/30V SOT23 IRLML0030TRPBF

Rapid Electronics

Power MOSFET, N Channel, 30 V, 5.3 A, 0.027 ohm, SOT-23, Surface Mount

Avnet

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

Distrelec

30V 5.3A 1.3W 27m´Î@10V5.2A 2.3V@25Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Semicontronic

MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.3A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes

Newark

MOSFET, N CH, 30V, 5.3A, SOT23-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

N-Channel MOSFET, 30V drain-source voltage, 5.3A continuous drain current, and 0.027 ohm on-resistance. Features a 1.7V nominal gate-source voltage and 1.7V threshold voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in a compact SOT-23 (TO-236AB) surface-mount case, this silicon metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT. Includes 5.2ns turn-on and 7.4ns turn-off delay times.

Concentric