onsemi NDS352AP

Name: onsemi NDS352AP
Brand: onsemi
SKU: NDS352AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ

$ 0.2

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Distributor		SKU		Min	Pkg
Newark	2	NDS352AP	89	1	Cut Tape	0.721	0.448	0.287	0.196	0.196
Verical	5	NDS352AP	3,715	45				0.193	0.155	0.131
Arrow Electronics	2	NDS352AP	3,715	1		0.267	0.230	0.193	0.155	0.131
Master Electronics		NDS352AP	12,000	250					0.203	0.145
Onlinecomponents.com		NDS352AP	12,000	250	Bulk				0.203	0.145

数据表和文档

下载 onsemi NDS352AP 的数据表和制造商文档。

IHS

Datasheet7 页28 年前

Datasheet9 页4 年前

Upverter

element14 APAC

onsemi

element14

库存历史记录

3 个月趋势:

-13.25%

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供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-02-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi NDS352AP 的描述。

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ

onsemi

MOSFET P-CH 30V 0.9A SSOT3 / Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R

Win Source

P-Channel 30 V 0.5 O Surface Mount Field Effect Transistor - SSOT-3

Future Electronics

MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:900mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS352P; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-2.5V

element14 APAC

These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Fairchild Semiconductor