Infineon IRLML2030TRPBF

Name: Infineon IRLML2030TRPBF
Brand: Infineon
SKU: IRLML2030TRPBF

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

$ 0.106

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Distributor		SKU		Min	Pkg
Avnet		IRLML2030TRPBF	21,000	3K						0.054	2d
Newark	2	IRLML2030TRPBF	7,924	5	Cut Tape		0.267	0.177	0.125	0.125
Arrow Electronics	2	IRLML2030TRPBF	6,265	1		0.337	0.209	0.132	0.084	0.055
Future Electronics	2	IRLML2030TRPBF	48,000	3K	Tape & Reel					0.055
Rochester Electronics		IRLML2030TRPBF	76,299					0.074	0.061	0.055	20h

数据表和文档

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Newark

Datasheet10 页16 年前

IHS

Upverter

iiiC

库存历史记录

3 个月趋势:

+98.06%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-11-04

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRLML2030TRPBF 的描述。

30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS

Infineon SCT

MOSFET N-CH 30V 2.7A SOT-23-3 / Trans MOSFET N-CH 30V 2.7A 3-Pin SOT-23 T/R

Win Source

Single N-Channel 30 V 154 mOhm 1 nC HEXFET® Power Mosfet - SOT-23

Future Electronics

MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W

Distrelec

HEXFET POWER MOSFET Small Signal Field-Effect Transistor

ComSIT Distribution GmbH

MOSFET, 30V, 2.7A, 100 MOHM, 1.0 NC QG,SOT-23

RS (Formerly Allied Electronics)

MOSFET, N CH, 30V, 2.7A, SOT-23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):80mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.7A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V

element14 APAC

Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:1.3W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRLML2030TRPBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon