供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-05-11
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2008-09-30
LTD Date2009-03-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
相关零件
onsemiNTMFS4837NT1G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 74A Tc 74A 2.2W 10ns
onsemiNTD4858NAT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 11.2A Ta 73A Tc 13.6A 2W 25V
STMicroelectronicsSTD86N3LH5
STD86N3LH5 Series 30 V 0.005 Ohm 80 A N-Channel STripFET H5 Power Mosfet-DPAK-3
STMicroelectronicsSTL66N3LLH5
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Diodes Inc.DMT3006LPS-13
DMT3006LPS Series 30 V 16 A N-Channel Enhancement Mode Mosfet - PowerDI5060-8
描述
由其分销商提供的 onsemi NTMFS4839NT1G 的描述。
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.5A Ta 64A Tc 64A 2.17W 7ns
Power MOSFET 30V 64A 5.5 mOhm Single N-Channel SO-8FL
MOSFETs- Power and Small Signal NFET 30V 66A 6MOHM
Trans MOSFET N-CH 30V 15A 5-Pin SO-FL EP T/R
Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NTMFS4839NT1G, SINGLE MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins5
Number of Terminals5
Technical
Continuous Drain Current (ID)9.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.588 nF
Max Operating Temperature150 °C
Max Power Dissipation870 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation2.17 W
Rds On Max5.5 mΩ
Rise Time29 ns
Turn-Off Delay Time18 ns