供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
相关零件
InfineonAUIRFR120Z
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
onsemiSFT1443-TL-W
Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 Infineon IRFR120ZTRLPBF 的描述。
100V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Trans MOSFET N-CH 100V 8.7A 3-Pin(2+Tab) DPAK T/R
MOSFET, 100V, 8.7A, 190 MOHM, 6.9 NC QG, D-PAK
Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.7A; On Resistance, Rds(on):190mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time23 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance310 pF
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation35 W
Rds On Max190 mΩ
Rise Time26 ns
Turn-Off Delay Time27 ns
Turn-On Delay Time8.3 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm