Infineon AUIRF2805S

Name: Infineon AUIRF2805S
Brand: Infineon
SKU: AUIRF2805S

Trans MOSFET N-CH Si 55V 135A Automotive 3-Pin(2+Tab) D2PAK T/R

$ 1.52

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	AUIRF2805STRL	24,000					1.700	1.520	1.430	20h
RS (Formerly Allied Electronics)	AUIRF2805S	0	3K	Bulk					2.520	13h
Avnet	AUIRF2805S	0	3K							22h
Farnell	AUIRF2805S	0	1		1.854*	1.541*	1.541*	1.541*	1.541*	7h
Microchip USA	AUIRF2805STRL	303	600	Bulk				1.792	1.792	1d

数据表和文档

下载 Infineon AUIRF2805S 的数据表和制造商文档。

IHS

Datasheet12 页10 年前

TME

库存历史记录

3 个月趋势:

+0.00%

备用零件

此零件

备用零件

InfineonAUIRF2805S

InfineonIRF2805STRLPBF

Price @ 1000

$ 1.52

$ 2.045

Stock

97,127

156,776

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

Rds On Max

4.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

5.11 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-06-23

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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描述

由其分销商提供的 Infineon AUIRF2805S 的描述。

Trans MOSFET N-CH Si 55V 135A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

Infineon SCT

Benefits: Advanced Process Technology; Ultra Low On-Resistance; Dynamic dv/dt Rating; 175C Operating Temperature; Fast Switching; Fully Avalanche Rated; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified

Infineon

MOSFET, N CH, 55V, 135A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)

element14 APAC