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描述
由其分销商提供的 STMicroelectronics STB100NF04T4 的描述。
N-channel 40 V, 0.0043 Ohm typ., 120 A StripFET II Power MOSFET in D2PAK package
STB100NF04T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 40 V, 3-PIN D2PAK
Trans MOSFET N-CH 40V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
STB100 Series 40 V 120 A 4.6 mOhm 300 W 110 nC N-Channel MOSFET - D2PAK
MOSFET, N CH, 40V, 120A, 0R0043, TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vg
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.1 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation300 W
Rds On Max4.6 mΩ
Resistance4.6 mΩ
Rise Time220 ns
TerminationSMD/SMT
Threshold Voltage2 V
Turn-Off Delay Time80 ns
Turn-On Delay Time35 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm