onsemi FDB039N06

Name: onsemi FDB039N06
Brand: onsemi
SKU: FDB039N06

Trans MOSFET N-CH 60V 174A 3-Pin(2+Tab) D2PAK Tube

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Win Source	WS-FDB039N06	1,300	12				3.750	3.362	3.362	11h
Worldway Electronics	FDB039N06	9,511	7	Tape & Reel		1.394	1.351	1.280	1.280	9h
Anlinkda	FDB039N06	42,692			0.958	0.858	0.781	0.752	0.740	18h
RC Electronics	FDB039N06	38,352	1		0.700	0.650	0.590	0.560	0.540	>1wk
SHENGYU ELECTRONICS	FDB039N06	17,812	1		0.712	0.698	0.680	0.660	0.630	3d

数据表和文档

下载 onsemi FDB039N06 的数据表和制造商文档。

IHS

Datasheet8 页21 年前

Datasheet0 页0 年前

onsemi

Fairchild Semiconductor

Arrow Electronics

CAD 模型

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来源	eCAD	mCAD	文件
Ultra Librarian	符号封装		下载

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-08-11

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-09-11

LTD Date2014-03-11

描述

由其分销商提供的 onsemi FDB039N06 的描述。

Trans MOSFET N-CH 60V 174A 3-Pin(2+Tab) D2PAK Tube

Verical

N-Channel PowerTrench® MOSFET 60V, 174A, 3.9mΩ

onsemi

Power Field-Effect Transistor, 120A I(D), 60V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Fairchild Semiconductor

制造商别名

onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

技术规格

Physical

Case/PackageTO-263-3

MountSurface Mount

Number of Terminals2

Weight1.31247 g

Technical

Continuous Drain Current (ID)120 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance3.9 mΩ

Drain to Source Voltage (Vdss)60 V

Element ConfigurationSingle

Fall Time24 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance8.235 nF

Max Operating Temperature175 °C

Max Power Dissipation231 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Number of Elements1

Power Dissipation231 W

Rds On Max3.9 mΩ

Rise Time40 ns

Schedule B8541290080

Turn-Off Delay Time55 ns

Turn-On Delay Time30 ns

数据表和文档

下载 onsemi FDB039N06 的数据表和制造商文档。