Infineon IRF2805STRLPBF

Name: Infineon IRF2805STRLPBF
Brand: Infineon
SKU: IRF2805STRLPBF

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

$ 2.045

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF2805STRLPBF	800					1.200	1.070	1.010	3h
RS (Formerly Allied Electronics)		IRF2805STRLPBF	0	5	Bulk		3.350	3.020	3.020	3.020	19h
Farnell	2	IRF2805STRLPBF	0	1	Cut Tape	3.960*	2.585*	1.810*	1.810*	1.810*	2h
Component Stockers USA		IRF2805STRLPBF	38,187			2.510	2.110	1.680	1.020	1.040	1d
Weyland Electronics Group Pte. Ltd.		IRF2805STRLPBF	5,600	1	Tape & Reel	9.766	9.766	9.766	9.766	9.766	4h

数据表和文档

下载 Infineon IRF2805STRLPBF 的数据表和制造商文档。

IHS

Datasheet12 页15 年前

Datasheet11 页15 年前

Newark

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

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InfineonIRF2805STRLPBF

InfineonIRF2805SPBF

Price @ 1000

$ 2.045

$ 2.535

Stock

164,515

77,978

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

4.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

5.11 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2002-06-10

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRF2805STRLPBF 的描述。

55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Single N-Channel 55 V 4.7 mOhm 230 nC HEXFET® Power Mosfet - TO-262

Future Electronics

Trans MOSFET N-CH 55V 135A 3-Pin(2+Tab) D2PAK T/R

Avnet

Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Power FET Operating temperature: -55...+175 °C Housing type: DPAK Polarity: N Variants: Enhancement mode Power dissipation: 200 W

Distrelec

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 55V, 135A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:135A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.0039ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes

Newark