Infineon IRF2204SPBF

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Single N-Channel 40 V 3.6 mOhm 200 nC Surface Mount HEXFET® Power Mosfet - D2PAK

Trans MOSFET N-CH Si 40V 170A 3-Pin(2+Tab) D2PAK

Power Field-Effect Transistor, 75A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

MOSFET, N, 40V, 170A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:40V; Current, Id Cont:170A; Resistance, Rds On:0.0036ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; ;RoHS Compliant: Yes

MOSFET, N, 40V, 170A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:170A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:3.6mohm; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:850A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3.6V