Technical
Ambient Temperature Range High85 °C
Collector Emitter Breakdown Voltage70 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio20 %
Dark Current100 nA
Fall Time8 s
Forward Current60 mA
Forward Voltage1.25 V
Input Current60 mA
Max Collector Current4 mA
Max Junction Temperature (Tj)100 °C
Max Operating Temperature85 °C
Max Output Current100 mA
Max Power Dissipation250 mW
Min Operating Temperature-55 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Output Current4 mA
Output Voltage70 V
Power Dissipation250 mW
Response Time8 µs
Reverse Breakdown Voltage6 V
Reverse Voltage (DC)6 V
Rise Time10 s
Schedule B8541406050
Sensing Distance3.0988 mm
Turn-Off Delay Time8 µs
Turn-On Delay Time10 µs
Voltage Rating (DC)1.25 V
Wavelength950 nm