Vishay IRLI640GPBF
N-Channel 200 V 40 W 66 nC Power Mosfet Flange Mount - TO-220FPAK
$ 1.33
Production
Inventory History
3 month trend: -11.75%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 7 months ago)
Descriptions
Descriptions of Vishay IRLI640GPBF provided by its distributors.
N-Channel 200 V 40 W 66 nC Power Mosfet Flange Mount - TO-220FPAK
Trans MOSFET N-CH 200V 9.9A 3-Pin(3+Tab) TO-220FP
POWER MOSFET Power Field-Effect Transistor, 9.9A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 200V, 9.8A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.8A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Inventory History
3 month trend: -11.75%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)9.9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time52 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance1.8 nF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation40 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time83 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time44 ns
Turn-On Delay Time8 ns
Voltage200 V
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements