Vishay IRLD120PBF

Name: Vishay IRLD120PBF
Brand: Vishay
SKU: IRLD120PBF

Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP-4

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
TTI	IRLD120PBF	0	2500	Tube					1.030	2h
RS (Formerly Allied Electronics)	IRLD120PBF	0	2500	Bulk					1.010	15h
Farnell	IRLD120PBF	0	1		1.867*	1.260*	0.956*	0.661*	0.661*	23h
element14 APAC	IRLD120PBF	0	1		1.086*	0.772*	0.613*	0.432*	0.409*	1d
Microchip USA	IRLD120PBF	2,189	3K	Tube					0.584	7d

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRLD120PBF.

Newark

Datasheet9 pages4 years ago

Datasheet9 pages14 years ago

Datasheet8 pages16 years ago

Datasheet9 pages10 years ago

Datasheet9 pages11 years ago

Datasheet6 pages28 years ago

element14 APAC

Verical

RS (Formerly Allied Electronics)

TME

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1990-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-11-18

LTD Date2025-05-18

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Descriptions

Descriptions of Vishay IRLD120PBF provided by its distributors.

Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP-4

Future Electronics

MOSFET N-CH 100V 1.3A 4-DIP | Siliconix / Vishay IRLD120PBF

RS (Formerly Allied Electronics)

POWER MOSFET Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

N Channel Mosfet, 100V, 1.3A, Hd-1; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.3A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:5V Rohs Compliant: No

Newark

MOSFET, N, LOGIC, DIL; Transistor Polarity:N Channel; Continuous Drain Current Id:1.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DIP; No. of Pins:4; Current Id Max:1.3A; Current Temperature:25°C; Device Marking:IRLD120PBF; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Package / Case:DIP; Power Dissipation Pd:1.3W; Power Dissipation Pd:1.3W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:10V; Voltage Vgs Rds on Measurement:5V

element14 APAC