Vishay IRFR9210PBF

Name: Vishay IRFR9210PBF
Brand: Vishay
SKU: IRFR9210PBF

Single P-Channel 200 V 3 Ohm 25 W Surface Mount Power Mosfet - TO-252-3

$ 0.558

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRFR9210PBF	1,796	1		1.842	0.898	0.723	0.558	0.558
Verical		IRFR9210PBF	1,794	26				0.722	0.558	0.541
DigiKey		IRFR9210PBF-ND	2,817	1	Tube	2.570	2.570	1.177	0.896	0.703
TTI		IRFR9210PBF	1,875	75	Tube			0.439	0.429	0.408	5h
TME	2	IRFR9210PBF	0	1		2.098*	0.988*	0.813*	0.707*	0.648*	16h

Inventory History

3 month trend: +0.01%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRFR9210PBF.

Farnell

Datasheet13 pages4 years ago

IHS

Newark

Future Electronics

TME

Inventory History

3 month trend:

+0.01%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1993-09-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay IRFR9210PBF provided by its distributors.

Single P-Channel 200 V 3 Ohm 25 W Surface Mount Power Mosfet - TO-252-3

Future Electronics

POWER MOSFET Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Transistor Polarity:p Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:1.9A; On Resistance Rds(On):3Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No

Newark

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1.2 / Drain-Source Voltage (Vds) V = -200 / ON Resistance (Rds(on)) Ohm = 3 / Gate-Source Voltage V = -4 / Fall Time ns = 13 / Rise Time ns = 12 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = Through Hole / Power Dissipation (Pd) W = 25

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