Vishay IRF624PBF

Name: Vishay IRF624PBF
Brand: Vishay
SKU: IRF624PBF

Single N-Channel 250 V 1.1 Ohms Flange Mount Power Mosfet - TO-220AB

$ 0.631

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
TME	2	IRF624PBF	0	1		1.376*	0.895*	0.637*	0.506*	0.506*	14h
RS (Formerly Allied Electronics)		IRF624PBF	0	1K	Bulk				1.040	0.930	18h
element14 APAC		IRF624PBF	0	1		1.177*	0.845*	0.669*	0.472*	0.440*	14h
Farnell		IRF624PBF	0	1		0.667*	0.667*	0.667*	0.667*	0.667*	1d
Mouser		844-IRF624PBF	616	1	Tube	2.230	1.400	0.919	0.631	0.549

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay IRF624PBF.

IHS

Datasheet7 pages2 years ago

Arrow Electronics

Newark

Farnell

Future Electronics

Inventory History

3 month trend:

+0.00%

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1990-01-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-11-04

LTD Date2025-05-04

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Descriptions

Descriptions of Vishay IRF624PBF provided by its distributors.

Single N-Channel 250 V 1.1 Ohms Flange Mount Power Mosfet - TO-220AB

Future Electronics

MOSFET, POWER, N-CH, VDSS 250V, RDS(ON) 1.1 OHMS, ID 4.4A, TO-220AB, PD 50W, VGS +/-20V

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 250V 4.4A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N TO-220 250V 4.4A; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:250V; On Resistance Rds(on):1.1ohm; Transistor Case Style:TO-220AB; Junction to Case Thermal Resistance A:2.5°C/W; On State resistance @ Vgs = 10V:1.1kohm; Package / Case:TO-220AB; Power Dissipation Pd:50W; Pulse Current Idm:14A; Transistor Type:

element14 APAC