Vishay IRL620PBF
$ 0.401
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-03-16
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
Descriptions
Descriptions of Vishay IRL620PBF provided by its distributors.
Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220-3
N CHANNEL MOSFET, 200V, 5.2A TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:5.2A;
Trans MOSFET N-CH 200V 5.2A 3-Pin(3+Tab) TO-220AB
200V 5.2A 50W 800m´Î@5V3.1A 2V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-220AB
Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:5.2A; On Resistance, Rds(on):800mohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:TO-220AB ;RoHS Compliant: Yes
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
Technical Specifications
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.2 A
Current Rating5.2 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)10 V
Input Capacitance360 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation50 W
Rds On Max800 mΩ
Resistance800 mΩ
Rise Time31 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time18 ns
Turn-On Delay Time4.2 ns
Voltage Rating (DC)200 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements