Infineon BUZ73A
Obsolete
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1984-10-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-02-28
LTD Date2011-08-31
Related Parts
InfineonIRF630NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
InfineonIRF640NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
Descriptions
Descriptions of Infineon BUZ73A provided by its distributors.
5.5 A 200 V 0.6 ohm N-CHANNEL Si POWER MOSFET TO-220AB
SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.5A; On Resistance, Rds(on):0.6ohm; Package/Case:TO-220AB; Power Dissipation, Pd:40W; Current, Idm pulse:22A; Drain-Source Breakdown Voltage:200V ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:40W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Power Dissipation Ptot Max:40W; Pulse Current Idm:22A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technical Specifications
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance530 pF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
Power Dissipation40 W
Rds On Max600 mΩ
Rise Time40 ns
TerminationThrough Hole
Turn-Off Delay Time55 ns
Voltage Rating (DC)200 V
Dimensions
Lead Pitch2.54 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance Statements