Texas Instruments CSD18535KTTT

Name: Texas Instruments CSD18535KTTT
Brand: Texas Instruments
SKU: CSD18535KTTT

60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm 2-DDPAK/TO-263 -55 to 175

$ 2.221

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Datasheet

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Price and Stock

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Distributor

SKU

Min

Pkg

Bulk Pricing

Mouser

595-CSD18535KTTT

Tape & Reel

USD

USD

Cut Tape

USD

Tape & Reel

USD

3 month trend: -5.19%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Texas Instruments CSD18535KTTT.

Texas Instruments

Technical Drawing4 pages1 year ago

Official datasheet0 pages0 years ago

Technical Drawing4 pages9 years ago

Technical Drawing2 pages12 years ago

TME

Augswan

LCSC

Arrow.cn

Inventory History

3 month trend:

-5.19%

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Alternate Parts

This Part

Alternate Parts

Texas InstrumentsCSD18535KTTT

Texas InstrumentsCSD18535KTT

Price @ 1000

$ 2.221

$ 1.7

Stock

264,072

410,274

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-263

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (ID)

279 A

200 A

Threshold Voltage

1.9 V

Rds On Max

2 mΩ

Gate to Source Voltage (Vgs)

Power Dissipation

Input Capacitance

6.62 nF

Supply Chain

Lifecycle StatusProduction (Last Updated: 1 day ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)

Engineering Resources

View Evaluation kits and Reference designs for Texas Instruments CSD18535KTTT.

Evaluation Kit

CSD18535KTTT Evaluation Kit

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Descriptions

Descriptions of Texas Instruments CSD18535KTTT provided by its distributors.

60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm 2-DDPAK/TO-263 -55 to 175

Texas Instruments

MOSFET N-CH 60V 200A TO-263 / Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) TO-263 T/R

Win Source

MOSFET, N-CH, 60V, 279A, TO-263-3; Polarité transistor: Canal N; Courant de drain Id: 279A; Tension Vds max..: 60V; Résistance Rds(on): 0.0016ohm; Tension, mesure Rds: 10V; Tension de seuil Vgs: 1.9V; Dissipation de puissance

Farnell

MOSFET, N-CH, 60V, 279A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:279A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Dissipation Pd:300W; Transistor Case Style:TO-263; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 2 - 1 year; SVHC:No SVHC (27-Jun-2018)

element14 APAC

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Manufacturer Aliases

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