onsemi FDB088N08

Name: onsemi FDB088N08
Brand: onsemi
SKU: FDB088N08

N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

$ 1.569

EOL

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	FDB088N08	8,540	863					1.519	1.423	4d
Verical	2	FDB088N08	5,600	188					1.663	1.475
Rochester Electronics		FDB088N08	5,985					1.600	1.330	1.180	13h
DigiKey		FDB088N08CT-ND	240	1	Cut Tape	3.500	2.287	1.597	1.597	1.597
Flip Electronics		FDB088N08	8,540								5d

Inventory History

3 month trend: -0.13%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FDB088N08.

IHS

Datasheet8 pages12 years ago

Master Electronics

onsemi

Fairchild Semiconductor

element14 APAC

Inventory History

3 month trend:

-0.13%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiFDB088N08

InfineonIRFS3607TRLPBF

Price @ 1000

$ 1.569

$ 0.629

Stock

549,054

554,663

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

85 A

80 A

Threshold Voltage

2 V

Rds On Max

8.8 mΩ

9 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

160 W

140 W

Input Capacitance

6.595 nF

3.07 nF

Supply Chain

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2009-03-26

Lifecycle StatusEOL (Last Updated: 1 day ago)

LTB Date2026-01-01

LTD Date2026-07-01

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 day ago)

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Descriptions

Descriptions of onsemi FDB088N08 provided by its distributors.

N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ

onsemi

FAIRCHILD SEMICONDUCTOR FDB088N08 MOSFET Transistor, N Channel, 120 A, 75 V, 0.0073 ohm, 10 V, 2 V

Fly-Wing Technology

Power Field-Effect Transistor, 85A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Fairchild Semiconductor

MOSFET, N CH, 75V, 85A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0073ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell