STMicroelectronics STY112N65M5
$ 26.095
Production
Inventory History
3 month trend: +68.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STY112N65M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-20
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STY112N65M5 provided by its distributors.
N-channel 650 V, 0.019 Ohm typ., 96 A MDmesh M5 Power MOSFET in a Max247 package
N-Channel 650 V 22 mOhm Through Hole MDmesh V Power MosFet - MAX-247
STY112N65M5 N-CHANNEL MOSFET TRANSISTOR, 96 A, 650 V, 3-PIN MAX247
N-CHANNEL 650 V, 0.019 OHM, 93 A, MDMESH V POWER MOSFET Power Field-Effect Transistor, 93A I(D), 650V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 650V, 93A MAX247; Transistor Polarity: N Channel; Continuous Drain Current Id: 96A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +68.99%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)93 A
Drain to Source Breakdown Voltage710 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time140 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance16.87 nF
Max Operating Temperature150 °C
Max Power Dissipation450 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation625 W
Rds On Max22 mΩ
Resistance22 MΩ
Rise Time79 ns
Threshold Voltage4 V
Turn-Off Delay Time53 ns
Turn-On Delay Time267 ns
Dimensions
Height20.3 mm
Length5.9 mm
Width5.3 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STY112N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant