STMicroelectronics STW88N65M5
$ 8.795
Production
Inventory History
3 month trend: +81.50%
CAD Models
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Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW88N65M5.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-12-09
Lifecycle StatusProduction (Last Updated: 4 months ago)
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Descriptions
Descriptions of STMicroelectronics STW88N65M5 provided by its distributors.
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package
Trans MOSFET N-CH Si 650V 84A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 84A TO-247
STW88N65M5 N-CHANNEL MOSFET TRANSISTOR, 84 A, 710 V, 3-PIN TO-247
Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N CH, 650V, 84A, 0R024, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 84A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +81.50%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)84 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance29 mΩ
Drain to Source Voltage (Vdss)710 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance8.825 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation450 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation450 W
Rds On Max29 mΩ
Resistance24 mΩ
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time141 ns
Turn-On Delay Time141 ns
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW88N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant