Infineon IPW60R040C7XKSA1

Power MOSFET, N Channel, 600 V, 50 A, 40 mOhm, TO-247, 3 Pins, Through Hole

Power Field-Effect Transistor, 50A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Mosfet, N-Ch, 600V, 50A, To-247; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:50A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.5V; Msl:- Rohs Compliant: Yes |Infineon Technologies IPW60R040C7XKSA1

The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.