STMicroelectronics STW32N65M5
$ 7.19
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
Distributor
SKU
Min
Pkg
Bulk Pricing
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW32N65M5.
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-01-21
Lifecycle StatusObsolete (Last Updated: 3 months ago)
Related Parts
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STMicroelectronicsSTW35N65M5
N-channel 650 V, 0.085 Ohm, 27 A, MDmesh(TM) V Power MOSFET in TO-247
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MOSFET N-CH 650V 31.2A TO247-3 N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO247-3
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MOSFET N-CH 600V 31A TO247-3 N-Channel 600 V 31A (Tc) 255W (Tc) Through Hole PG-TO247-3
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Descriptions
Descriptions of STMicroelectronics STW32N65M5 provided by its distributors.
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247
Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET POWER MOSFET N-CH 650V 24 A
MOSFET N-CHANNEL 650V 24A TO247
STMICROELECTRONICS STW32N65M5 MOSFETS
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
Inventory history trend unavailable
CAD Models
0 models available
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)24 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance119 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance3.32 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rds On Max119 mΩ
Resistance119 MΩ
Rise Time12 ns
Turn-Off Delay Time53 ns
Turn-On Delay Time53 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW32N65M5.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant