STMicroelectronics STW18NM60ND
$ 2.652
Obsolete
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW18NM60ND.
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-02-04
LTD Date2016-08-04
Related Parts
STMicroelectronicsSTW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
Descriptions
Descriptions of STMicroelectronics STW18NM60ND provided by its distributors.
N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-247
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
STW18NM60ND N-channel MOSFET Transistor, 13 A, 600 V, 3-Pin TO-247
MOSFET N-CH 600V 13A TO-247 / Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-247 Tube
Power Field-Effect Transistor, 13A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max290 mΩ
Rise Time15.5 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time55 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STW18NM60ND.
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant